IEEE - Institute of Electrical and Electronics Engineers, Inc. - An improved methodology for monitoring NBTI induced threshold voltage shift of scaled p-MOSFETS

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Y.Z. Hu ; D.S. Ang ; G.A. Du
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 743 - 744
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4559017
Regular:

Conventional fast switching measurement method for NBTI characterization, which relates linear drain current degradation DeltaId to threshold voltage shift |DeltaVt| based on... View More

Advertisement