IEEE - Institute of Electrical and Electronics Engineers, Inc. - New hot-carrier degradation phenomenon in nano-scale floating body MOSFETS

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): J.-W. Yang ; H.R. Harris ; C.Y. Kang ; C.D. Young ; K.T. Lee ; H.D. Lee ; G. Bersuker ; B.H. Lee ; H.-H. Tseng ; R. Jammy
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 739 - 740
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4559015
Regular:

New hot-carrier degradation phenomenon that depends on gate bias in nano-scale floating body MOSFETs is identified using 2-D device simulation and hot-carrier injection measurements. In the case... View More

Advertisement