IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Z.Y. Liu ; Daming Huang ; W.J. Liu ; C.C. Liao ; L.F. Zhang ; Z.H. Gan ; Waisum Wong ; Ming-Fu Li
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 733 - 734
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4559012
Regular:

In this work, we combine our recently developed recovery free on-the-fly interface traps measurement (OFIT) and fast-pulsed-measurement (FPM) to conduct a comprehensive study of BTI... View More

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