IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impacts of process induced interfacial defects on gate oxide integrity

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): N. Liu ; A. Haggag ; J. Peschke ; M. Moosa ; C. Weintraub ; H. Lazar ; G. Campbell ; A. Srivastava ; J. Liu ; J. Porter ; K. Picone ; J. Parrish ; J. Jiang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 725 - 726
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4559008
Regular:

In this work, voltage ramp dielectric breakdown (VRDB), time dependent dielectric breakdown, (TDDB) and bias temperature instability (BTI) were conducted to evaluate the impacts of process induced... View More

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