IEEE - Institute of Electrical and Electronics Engineers, Inc. - Plasma induced damage of aggressively scaled gate dielectric (EOT ≪ 1.0nm) in metal gate/high-k dielectric CMOSFETs

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Kyung Seok Min ; Chang Yong Kang ; Ook Sang Yoo ; Byoung Jae Park ; Sung Woo Kim ; C.D. Young ; Dawei Heh ; G. Bersuker ; Byoung Hun Lee ; Geun Young Yeom
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 723 - 724
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4559007
Regular:

Sample devices were fabricated with 2.0 nm SiO2 and 2.5-10.0 nm HfO2. Transistor transconductance and gate leakage were used to evaluate PID. BTI and dielectric breakdown... View More

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