IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel characterization method to monitor process damage for transistors

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): S. Kitazaki ; Y. Kumura ; S. Shuto ; T. Ozaki ; T. Hamamoto ; A. Nitayama
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 719 - 720
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4559005
Regular:

The most appropriate method to evaluate the process damage is proposed. FeRAM process is used as a damage source. The degradation of the drain current of long-channel MOSFET is larger than that of... View More

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