IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new device reliability evaluation method for overdrive voltage circuit application

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Tao Cheng ; M.Z. Lee ; M.T. Yang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 715 - 716
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4559003
Regular:

A new device reliability evaluation method is reported for the circuit application under voltage overdrive. Through an appropriate methodology shown in this paper, the 3.3V CMOS oxide reliability... View More

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