IEEE - Institute of Electrical and Electronics Engineers, Inc. - Degradation of reliability of high-k gate dielectrics caused by point defects and residual stress

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): H. Miura ; K. Suzuki ; T. Ikoma ; S. Samukawa ; H. Yoshikawa ; S. Ueda
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 713 - 714
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4559002
Regular:

In this study, the degradation mechanism of dielectric properties of hafnium dioxide thin films was investigated by using quantum chemical molecular dynamics. Effects of point defects such as... View More

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