IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of device degradation of poly-Si TFTS under dynamic operation with drain biased

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Ya-Hsiang Tai ; Shih-Che Huang ; Chang-Lung Chan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 709 - 710
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4559000
Regular:

Poly-Si TFTs, which have the similar structures to the MOSFETs, are now having extensive studies for the applications in display system. The high device mobility of these devices enables the... View More

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