IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hydrogen distribution in oxide-nitride-oxide stacks and correlation with data retention of MONOS memories

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Ziyuan Liu ; T. Saito ; T. Matsuda ; K. Ando ; Shu Ito ; M. Wilde ; K. Fukutani
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 705 - 706
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558998
Regular:

We demonstrate that hydrogen (H) atom penetration into the bottom oxide (BTO) of ONO stacks degrades the retention reliability of MONOS memory. We observe that post-nitride (SiN)... View More

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