IEEE - Institute of Electrical and Electronics Engineers, Inc. - Resistance drift of MgO magnetic tunnel junctions by trapping and degradation of coherent tunneling

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): K. Hosotani ; M. Nagamine ; H. Aikawa ; N. Shimomura ; M. Nakayama ; Tadashi Kai ; S. Ikegawa ; Y. Asao ; H. Yoda ; A. Nitayama
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 703 - 704
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558997
Regular:

Magnetoresistive Random Access Memory (MRAM) is a promising device for high-density (over Gbits scale), high-speed (equal to DRAM or better) non-volatile RAM, and much research has been done over... View More

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