IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel method to analyze and design a NWL scheme DRAM

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Seokhan Park ; Bonggu Sung ; Hyuckchai Jung ; Junhee Lim ; Sangwoon Lee ; Jooyoung Lee ; Wonsuk Yang ; Kyungseok Oh ; Taeyoung Chung ; Kinam Kim
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 701 - 702
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558996
Regular:

One of the most important issues for DRAM development is the control of data retention time. A negatively-biased off-state level of the word line (NWL) was introduced to the memory cell design to... View More

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