IEEE - Institute of Electrical and Electronics Engineers, Inc. - New degradation mode of program disturb immunity of sub 90-nm node split-gate SONOS memory

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Y. Tsuji ; M. Terai ; S. Fujieda ; K. Ando
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 699 - 700
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558995
Regular:

We found a new-mode degradation of program-disturb immunity in split-gate SONOS memory with 90-nm technology node. The degradation proved to be caused by hot holes created during erase operation:... View More

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