IEEE - Institute of Electrical and Electronics Engineers, Inc. - A study of SONOS charge loss mechanism after hot-hole stressing using trap-layer engineering and electrical re-fill methods

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Yi-Hsuan Hsiao ; Hang-Ting Lue ; M.Y. Lee ; Shih-Chieh Huang ; Tsung-Yi Chou ; Szu-Yu Wang ; Kuang-Yeu Hsieh ; Rich Liu ; Chih-Yuan Lu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 695 - 696
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558993
Regular:

The high-Vt state data retention of 2bit/cell SONOS using hot-hole erasing method is studied extensively using a 0.13 mum virtual-ground array NOR-type test chip. We design various trap-layer... View More

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