IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dielectric conduction mechanisms of ULK/CU interconnects: Low field conduction mechanism and determination of defect density

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): V. Verriere ; C. Guedj ; V. Arnal ; A. Sylvestre
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 679 - 680
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558985
Regular:

The low field conduction mechanism in advanced Cu/ULK interconnects is consistent with 3D phonon-assisted hopping conduction in exponential band-tails. From these measurements, a defectivity... View More

Advertisement