IEEE - Institute of Electrical and Electronics Engineers, Inc. - Unique ESD failure mechanism of high voltage LDMOS transistors for very fast transients

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): A. Goyal ; J. Whitfield ; Changsoo Hong ; C. Gill ; C. Rouying Zhan ; V. Kushner ; A. Gendron ; S. Contractor
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 673 - 674
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558982
Regular:

We have identified and explained a unique ESD breakdown mechanism of high voltage 80V LDMOS structures for very fast CDM transients. The device was protected against observed damage by placing a... View More

Advertisement