IEEE - Institute of Electrical and Electronics Engineers, Inc. - Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): C.Y. Kang ; C.S. Park ; D. Heh ; C. Young ; P. Kirsch ; H.B. Park ; R. Choi ; G. Bersuker ; J.-W. Yang ; B.H. Lee ; J. Lichtenwalner ; J.S. Jur ; A.I. Kingon ; R. Jammy
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 663 - 664
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558977
Regular:

La-doped HfSiO samples showed lower Vth and Igate, which was attributed to the dipole formation at the high-k/SiO2 interface. With increasing SiOx... View More

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