IEEE - Institute of Electrical and Electronics Engineers, Inc. - Current leakage evolution in partially gate-ruptured power MOSFETs

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): L. Scheick ; L. Selva ; Yuan Chen ; L. Edmonds
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 645 - 646
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558968
Regular:

The range of resulting leakage from single-event gate rupture (SEGR) in power MOSFETs spans several decades, from hundreds of nanoamps to tens of milliamps being qualified as rupture events. The... View More

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