IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analytical model of radiation response in FDSOI MOSFETS

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): M.L. McLain ; H.J. Barnaby ; P.C. Adell
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 643 - 644
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558967
Regular:

It was recently shown that band-to-band tunneling (BBT), in combination with trapped charge buildup in the buried oxide, affects the radiation response in some fully-depleted... View More

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