IEEE - Institute of Electrical and Electronics Engineers, Inc. - 3D device modeling of damage due to filamentation under an ESD event in nanometer scale drain extended NMOS (DE-NMOS)

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): A. Chatterjee ; S. Pendharkar ; H. Gossner ; C. Duvvury ; K. Banerjee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 639 - 640
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558965
Regular:

We present a detailed understanding of filamentation, through rigorous mixed-mode 3D simulation in a nano-meter scale drain-extended NMOS (DE-NMOS). Localization is first triggered in the 2D plane... View More

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