IEEE - Institute of Electrical and Electronics Engineers, Inc. - A gate-controllable high-voltage SCR device with high performance in ESD protection and latch-up immunity

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Tuo-Hsin Chien ; K.Y.-J. Hsu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 629 - 630
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558960
Regular:

A simple gate-controllable high-voltage silicon-controlled rectifier (GC-HVSCR) is proposed in this work. With simply using an integrated control nMOS, the device can provide ESD protection while... View More

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