IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-robust ESD protection structure with embedded SCR in high-voltage CMOS process

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Tai-Hsiang Lai ; Ming-Dou Ker ; Wei-Jen Chang ; Tien-Hao Tang ; Kuan-Cheng Su
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 627 - 628
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558959
Regular:

The dependence of device structures and layout parameters on ESD robustness of HV MOSFETs in high-voltage 40-V CMOS process has been investigated by device simulation and verified in silicon test... View More

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