IEEE - Institute of Electrical and Electronics Engineers, Inc. - Charge Bursts Through Dielectric Layers of 4H-SiC/SiO 2 Metal Oxide Semiconductor Capacitors

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): M.J. Marinella ; D.K. Schroder ; G.Y. Chung ; M.J. Loboda ; T. Isaacs-Smith ; J.R. Williams
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 623 - 624
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558957
Regular:

Small bursts of inversion layer charge in 4H-SiC metal oxide semiconductor capacitors leak through the oxide layer leading to discontinuities during capacitance-time measurements. This behavior... View More

Advertisement