IEEE - Institute of Electrical and Electronics Engineers, Inc. - Physical modeling of single-trap RTS statistical distribution in flash memories

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): A. Ghetti ; M. Bonanomi ; C.M. Compagnoni ; A.S. Spinelli ; A.L. Lacaita ; A. Visconti
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 610 - 615
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558954
Regular:

In this paper we present an accurate physical modeling for the statistical distribution of Random Telegraph Signal threshold voltage fluctuations in Flash memories by means of 3D device... View More

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