IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new insight into the dynamic fluctuation mechanism of stress-induced leakage current

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): T. Ishida ; N. Tega ; Y. Mori ; H. Miki ; T. Mine ; H. Kume ; K. Torii ; M. Muraguchi ; Y. Takada ; K. Shiraishi ; R. Yamada
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 604 - 609
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558953
Regular:

The dynamic fluctuation of stress-induced leakage current, called V-SILC, which is one of the causes of erratic bits in flash memory, was investigated. The effect of V-SILC on flash memory... View More

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