IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of leakage behaviors of high-k gate stacks by electron-beam-induced current

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): J. Chen ; T. Sekiguchi ; N. Fukata ; M. Takase ; T. Chikyow ; K. Yamabe ; R. Hasumuma ; M. Sato ; Y. Nara ; K. Yamada
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 584 - 588
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558949
Regular:

Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. Carrier separated EBIC measurement has... View More

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