IEEE - Institute of Electrical and Electronics Engineers, Inc. - A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): D. Varghese ; V. Reddy ; H. Shichijo ; D. Mosher ; S. Krishnan ; M.A. Alam
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 566 - 574
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558946
Regular:

In this paper, we provide the first systematic and comprehensive analysis of off-state degradation in Drain-Extended PMOS transistors - an enabling input/output (I/O) component in many systems and... View More

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