IEEE - Institute of Electrical and Electronics Engineers, Inc. - An alternativemodel for interconnect low-k dielectric lifetime dependence on voltage

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): G.S. Haase
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 556 - 565
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558945
Regular:

Low-k dielectrics used in interconnect systems of advanced microelectronics devices tend to degrade faster than gate oxide under electric field. As spacing between metal lines shrink, degradation... View More

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