IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling single event upsets in Floating Gate memory cells

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): N.Z. Butt ; M. Alam
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 547 - 555
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558944
Regular:

We model soft errors in Floating Gate (FG) memory cells due to charge loss after single radiation particle strikes. In contrast to various classical models, we show that the transient carrier flux... View More

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