IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): N. Tega ; H. Miki ; M. Yamaoka ; H. Kume ; Toshiyuki Mine ; T. Ishida ; Yuki Mori ; R. Yamada ; Kazuyoshi Torii
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 541 - 546
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558943
Regular:

The impact of a random telegraph noise (RTN) on a scaled-down SRAM is shown for the first time. To estimate the impact on SRAM, we statistically analyzed a threshold voltage fluctuation... View More

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