IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electro-thermally activated degradation of blu-ray gan-based laser diodes

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): M. Meneghini ; G. Meneghesso ; N. Trivellin ; L. Trevisanello ; K. Orita ; M. Yuri ; E. Zanoni
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 424 - 428
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558922
Regular:

This paper describes an analysis of the reliability of GaN-based laser diodes, submitted to constant current, constant optical power and high temperature stress. We demonstrate that constant... View More

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