IEEE - Institute of Electrical and Electronics Engineers, Inc. - Relaxation of localized charge in trapping-based nonvolatile memory devices

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): M. Janai ; A. Shappir ; I. Bloom ; B. Eitan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 417 - 423
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558921
Regular:

Relaxation dynamics of trapped holes and trapped electrons in the ONO layer of NROM devices is studied. Hole relaxation is eight orders of magnitude faster than electron relaxation. The... View More

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