IEEE - Institute of Electrical and Electronics Engineers, Inc. - Degradation of solution based metal induced laterally crystallized p-type poly-Si TFTS under DC bias stresses

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Chunfeng Hu ; Mingxiang Wang ; Meng Zhang ; Bo Zhang ; Man Wong
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 363 - 367
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558913
Regular:

Device degradation of solution based metal-induced laterally crystallized (MILC) p-type poly-Si thin film transistors (TFTs) is studied under DC bias stresses, which is found to be dominated by... View More

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