IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new dielectric degradation phenomenon in nMOS high-k devices under positive bias stress

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Dawei Heh ; P.D. Kirsch ; C.D. Young ; G. Bersuker
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 347 - 351
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558910
Regular:

A new hole trap generation phenomenon during a positive bias stress in nMOS high-k transistors is reported. Fast transient hole trapping at the generated defects is manifested in a negative... View More

Advertisement