IEEE - Institute of Electrical and Electronics Engineers, Inc. - Contributions and limits of charge pumping measurement for addressing trap generation in high-k/SiO 2 dielectric stacks

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): M. Rafik ; G. Ribes ; G. Ghibaudo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 341 - 346
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558909
Regular:

The relevance of charge pumping (CP) measurements for addressing reliability issues is investigated. This analysis points to the formation of defects in the interfacial SiO2 layer... View More

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