IEEE - Institute of Electrical and Electronics Engineers, Inc. - NBTI degradation: From transistor to SRAM arrays

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): V. Huard ; C. Parthasarathy ; C. Guerin ; T. Valentin ; E. Pion ; M. Mammasse ; N. Planes ; L. Camus
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 289 - 300
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558900
Regular:

A novel composite model had been recently introduced to physically explain the mean pMOS threshold voltage shift (VTP) induced by NBTI degradation at transistor level in a quantitative... View More

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