IEEE - Institute of Electrical and Electronics Engineers, Inc. - Post breakdown oxide lifetime based on digital circuit failure

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): G. Ribes ; D. Roy ; V. Huard ; F. Monsieur ; M. Rafik ; J.M. Roux ; C. Parthasarathy
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 215 - 218
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558889
Regular:

The Reliability margin of aggressively scaled SiO-based gate dielectrics is strongly reduced. However, the first breakdown (BD) event of ultrathin oxide MOS devices does not always cause the... View More

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