IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new on-state drain-bias TDDB lifetime model and HCI effect on drain-bias TDDB of ultra thin oxide

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): P.J. Liao ; Chia Lin Chen ; J.W. Young ; Y.S. Tsai ; C.J. Wang ; K. Wu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 210 - 214
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558888
Regular:

For the first time, a new drain-bias TBD lifetime model is proposed to precisely predict at various Vd, Vg and channel length for ultra thin oxide. The TBD lifetime with drain-bias can... View More

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