IEEE - Institute of Electrical and Electronics Engineers, Inc. - New insight into the relation between Hot Carrier degradation and oxide breakdown through MVHR

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): G. Ribes ; D. Roy ; M. Rafik ; J.M. Roux ; C. Parthasarathy
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 206 - 209
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558887
Regular:

Most of the oxide breakdown studies are based on the results of measurements in which the oxide is uniformly stressed thus avoiding the HCI (hot carrier injection) regime. As devices typically... View More

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