IEEE - Institute of Electrical and Electronics Engineers, Inc. - Multi-bit upsets in 65nm SOI SRAMs

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): E.H. Cannon ; M.S. Gordon ; D.F. Heidel ; A.J. KleinOsowski ; P. Oldiges ; K.P. Rodbell ; H. Tang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 195 - 201
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558885
Regular:

We study multi-bit upsets (MBU) in 65 nm SOI SRAMs. Proton beam and thorium foil experiments demonstrate that SOI SRAMs have lower soft error rate than bulk SRAMs. Monte Carlo SER simulations show... View More

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