IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of multiple cell upset response of BULK and SOI 130NM technologies in the terrestrial environment

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): G. Gasiot ; P. Roche ; P. Flatresse
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 192 - 194
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558884
Regular:

This paper presents alpha and neutron experimental results on 130 nm SRAMs processed in SOI and bulk technologies. Experiments were analyzed for multiple cells upset (MCU) occurrence. MCU... View More

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