IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel technique for mitigating neutron-induced multi -cell upset by means of back bias

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): T. Nakauchi ; N. Mikami ; A. Oyama ; H. Kobayashi ; H. Usui ; J. Kase
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 187 - 191
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558883
Regular:

We investigated the effect of back bias (VBB) on neutron-induced multi-cell upset (MCU) in 65 nm low stand-by power SRAM. MCUs containing characteristic even number upsets were... View More

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