IEEE - Institute of Electrical and Electronics Engineers, Inc. - Multi-cell upset probabilities of 45nm high-k + metal gate SRAM devices in terrestrial and space environments

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): N. Seifert ; B. Gill ; K. Foley ; P. Relangi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 181 - 186
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558882
Regular:

Multi-cell soft errors are a key reliability concern for advanced memory devices. We have investigated single-bit (SBU) and multi-cell upset (MCU) rates of SRAM devices built in a 45 nm high-k +... View More

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