IEEE - Institute of Electrical and Electronics Engineers, Inc. - Degradation effects in a-Si:H thin film transistors and their impact on circuit performance

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): D.R. Allee ; L.T. Clark ; R. Shringarpure ; S.M. Venugopal ; Z.P. Li ; E.J. Bawolek
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 158 - 167
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558878
Regular:

Amorphous silicon thin film transistors degrade with electrical stress. In particular, the threshold voltage increases significantly with positive gate voltages. The characteristics and mechanisms... View More

Advertisement