IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electric-field and temperature dependencies of TDDB degradation in Cu/Low-K damascene structures

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): N. Suzumura ; S. Yamamoto ; D. Kodama ; H. Miyazaki ; M. Ogasawara ; J. Komori ; E. Murakami
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 138 - 143
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558875
Regular:

The electric field and temperature dependencies of time-dependent dielectric breakdown (TDDB) degradation in Cu/low-k damascene structures are investigated using Cu/SiOC and Cu/SiCN damascene... View More

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