IEEE - Institute of Electrical and Electronics Engineers, Inc. - Line edge roughness and spacing effect on low-k TDDB characteristics

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): F. Chen ; J.R. Lloyd ; K. Chanda ; R. Achanta ; O. Bravo ; A. Strong ; P.S. McLaughlin ; M. Shinosky ; S. Sankaran ; E. Gebreselasie ; A.K. Stamper ; Z.X. He
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 132 - 137
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558874
Regular:

The study of low-k TDDB line space scaling is important for assuring robust reliability for new technologies. Although spacing effects due to line edge roughness (LER) on low-k TDDB lifetime were... View More

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