IEEE - Institute of Electrical and Electronics Engineers, Inc. - Behavior of radiation-induced defects in bipolar oxides during irradiation and annealing in hydrogen-rich and -depleted ambients

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): X.J. Chen ; H.J. Barnaby ; R.L. Pease ; P. Adell
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 115 - 120
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558871
Regular:

The results of this study showed that when excess hydrogen is introduced to gated bipolar devices in the radiation environment, the buildup of radiation-induced defects in device oxides and their... View More

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