IEEE - Institute of Electrical and Electronics Engineers, Inc. - Mobility degradation due to interface traps in plasma oxynitride PMOS devices

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): A.E. Islam ; V.D. Maheta ; H. Das ; S. Mahapatra ; M.A. Alam
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 87 - 96
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558868
Regular:

Mobility degradation due to generation of interface traps (Deltamueff(NIT)) is a well-known phenomenon that has been theoretically interpreted by several mobility models.... View More

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