IEEE - Institute of Electrical and Electronics Engineers, Inc. - The fast initial threshold voltage shift: NBTI or high-field stress

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): J.P. Campbell ; K.P. Cheung ; J.S. Suehle ; A. Oates
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 72 - 78
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558866
Regular:

Recent negative bias temperature instability (NBTI) studies have come to involve very high electric fields, yet these same studies are used to criticize the lower field ldquoNBTIrdquo models. This... View More

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