IEEE - Institute of Electrical and Electronics Engineers, Inc. - A study of SRAM NBTI by OTF measurement

2008 IEEE International Reliability Physics Symposium (IRPS)

Author(s): H. Aono ; E. Murakami ; K. Shiga ; F. Fujita ; S. Yamamoto ; M. Ogasawara ; Y. Yamaguchi ; K. Yanagisawa ; K. Kubota
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2008
Conference Location: Phoenix, AZ, USA
Conference Date: 27 April 2008
Page(s): 67 - 71
ISBN (CD): 978-1-4244-2050-6
ISBN (Paper): 978-1-4244-2049-0
DOI: 10.1109/RELPHY.2008.4558865
Regular:

A mechanism of DeltaVth variation of NBTI for SRAM load transistor is examined. The variation data is in good agreement with our proposed model. A large fluctuation of NBTI for small size pMOS is... View More

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